Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator |
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| Affiliation: | 1.Hanshan Normal University, Chaozhou 521041, China;2.No.;5.Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 510610, China;3.Shenzhen University, Shenzhen 518000, China;4.School of Microelectronics, Xidian University, Xi'an 710071, China;5.School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China;6.Yibin Research Institute, Jilin University, Yibin 644000, China |
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| Abstract: | AlGaN/GaN heterojunction field-effect transistors (HFETs) with p-GaN cap layer are developed for normally-off operation, in which an in-situ grown AlN layer is utilized as the gate insulator. Compared with the SiNx gate insulator, the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region, which helps to positively shift the threshold voltage. In addition, the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown voltage. Owing to the introduction of AlN layer, normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is realized. Furthermore, the field-effect mobility is approximately 1500 cm2·V-1·s-1 in the 2DEG channel, implying a good device performance. |
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| Keywords: | AlGaN/GaN HFET normally-off in-situ AlN metal-insulator-semiconductor |
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