Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy |
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| Authors: | Z-Q Fang Q H Xie D C Look J Ehret J E Van Nostrand |
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| Affiliation: | (1) Semiconductor Research Center, Wright State University, 45435 Dayton, OH;(2) Air Force Research Laboratory, Wright-Patterson Air Force Base, 45433, OH |
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| Abstract: | We have investigated electron emission from self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular-beam epitaxy (MBE). Through detailed deep level transient spectroscopy comparisons
between the QD sample and a reference sample, we determine that trap D, with an activation energy of 100 meV and an apparent
capture cross section of 5.4×10−18 cm2, is associated with an electron quantum level in the In0.5Ga0.5As/GaAs QDs. The other deep levels observed, M1, M3, M4, and M6, are common to GaAs grown by MBE. |
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| Keywords: | Electron quantum level self-assembled In0 5Ga0 5As/GaAs quantum dots molecular-beam epitaxy (MBE) deep level transient spectroscopy (DLTS) |
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