一种基于忆阻器的大测量范围新型曝光量传感器

为了增大曝光量传感器的测量范围,提出了一种基于忆阻器的新型曝光量传感器设计方案.该传感器主要由光敏电阻、限流电阻和忆阻器组成.光敏电阻的阻值随着光照度的变化而变化,引起回路电流的变化,然后以变化的回路电流激励忆阻器.依据记忆特性,传感器以忆阻器的阻值来表征物体被辐照时光照度在一段时间内的积分值,从而实现对曝光量的测量.实验结果表明,曝光量传感器实现了对曝光量的测量,且具有大的测量范围.光照度为100 lx时,测量范围为0~500 lx·s;光照度以80 lx/s的稳定速率增大时,测量范围为0~1 000 lx·s.另外,限流电阻为0.2 MΩ时的测量上限值比10 kΩ时大780 lx·s,而灵敏度降低了87 Ω/(lx·s).增大限流电阻尽管可以增大传感器的测量范围,但是却降低了灵敏度.

A Novel Memristor-Based Exposure Sensorwith Large Measurement Range

In order to increase the measurement range of the exposure sensor,a novel exposure sensor based on memristor is proposed.The exposure sensor mainly consists of the photoresistor,the current-limiting resistance and the memristor.The photosensitive resistance's value alters with the photometric quantity,which leads to the loop current alters.Subsequently the memristor is drove by the variational loop current.Based on the memory feature,the resistance of memristor can character the integral value of the photometric quantity when the object is irradiated.Thus the light exposure can be measured by the memristor-based exposure sensor.The experimental results show that the sensor measures exposure and its measurement range is large.The measurement range of exposure sensor is from 0 to 500 lx·s when photometric quantity is 100 lx,and it is from 0 to 1 000 lx·s when photometric quantity increases by 80 lx/s.In addition,when current-limiting resistance is 0.2 MΩ,the measurement threshold value is 800 lx·s larger than that when current-limiting resistance is 10 kΩ.However,the sensitivity decreases by 87 Ω/(lx·s).Although increasing the current-limiting resistance will increase the measurement range,it will decrease the sensitivity.