Measurement and comparison of silicon <Emphasis Type="Italic">p-i-n</Emphasis>-photodiodes with ac impedance at different voltages |
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Authors: | S Özden H Bayhan A Dönmez M Bayhan |
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Affiliation: | (1) Faculty of Art and Science, Department of Physics, University of Muǧla, 48000 Mugla, Turkey |
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Abstract: | The dark alternating current (ac) parameters of commercially available silicon p-i-n-photodiodes are measured and compared at room temperature both in forward and reverse bias using the impedance spectroscopy
technique. The ac behavior of the photodiodes is found to be almost the same. For bias voltages in the range from −0.8 to
0.0 V, the typical photodiode behaves like a pure capacitor. For higher voltages (V >-0.2 V) the impedance spectra are nearly semicircular and typically distorted on the high frequency side. At 0.2 V the distortion
apparently arises from one of the two interfaces. However, at high bias voltages the nature of the distortion is attributed
to the variation of photodiode capacitance and resistance with measurement frequency.
The text was submitted by the authors in English. |
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