| 表面n沟CCD的电离辐射损伤 |
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| 引用本文： | 任迪运,张玲珊,瞿则涛,严荣良,董亮初,王缙,吴作良.表面n沟CCD的电离辐射损伤[J].核电子学与探测技术,1987(3). |
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| 作者姓名： | 任迪运 张玲珊 瞿则涛 严荣良 董亮初 王缙 吴作良 |
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| 作者单位： | 中国科学院新疆物理研究所
(任迪运,张玲珊,瞿则涛,严荣良),中国科学院上海技术物理研究所
(董亮初,王缙),中国科学院上海技术物理研究所(吴作良) |
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| 摘 要： | 本文报道了150光敏元表面n沟CCD(电荷耦合器件)在不同能量电子和γ射线辐照后的电离辐射效应。试验结果表明,转移失效率在≤10Gy时已明显增大。但大多数器件在累积剂量≤50Gy时,通过调整“胖零”注入仍可工作。在高剂量辐照期间,不同栅偏压器件的转移效率退化存在较大差异。应用高频和准静态C-V技术分析了参数退化的原因。
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| 关 键 词： | CCD 电离辐射损伤 转移失效率 平带电压 界面态 |
Ionizing Radiation Damage in n-Surface Channel CCD |
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| Ren Diyuan Zhang Lingshan Qu Zetao Yan Rongliang.Ionizing Radiation Damage in n-Surface Channel CCD[J].Nuclear Electronics & Detection Technology,1987(3). |
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| Authors: | Ren Diyuan Zhang Lingshan Qu Zetao Yan Rongliang |
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| Abstract: | The effects of ionizing radiation on 4-phase n-surface channel 150 bit CCDs (Charge coupled de-vices)under irradiation of gamma and electrons of different energy were investigated. The observed results indicate that the transfer inefficiency had increased obviously at 10 Gy.But,many of devices could be operated to the total dose of 50 Gy after readjusting "fat zero" injection.For higher doses ( = 50 Gy),the degradation of the transfer efficiency depnds on the gate-bias applied during radiation. By means of HF and quasi-static C-V technique, the causes of degradation in CCD function were analysed and discessed. |
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| Keywords: | CCD Ionizing radiation damage Transfer inefficiency Flat-band voltage Inter-face (state) |
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