| 硅基Bi4Ti3O12薄膜的C-V特性研究 |
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| 引用本文： | 付承菊,郭冬云,黄志雄.硅基Bi4Ti3O12薄膜的C-V特性研究[J].材料科学与工程学报,2005,23(1):74-76. |
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| 作者姓名： | 付承菊 郭冬云 黄志雄 |
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| 作者单位： | 武汉理工大学材料科学与工程学院,湖北,武汉,430070;武汉理工大学材料科学与工程学院,湖北,武汉,430070;武汉理工大学材料科学与工程学院,湖北,武汉,430070 |
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| 摘 要： | Bi4 Ti3O12是典型的层状钙钛矿结构铁电材料,具有优良的压电、铁电、热释电和电光等性能,可广泛应用于铁电存储器、压电和电光等器件.本文在硅衬底上利用溶胶凝胶法制备出Bi4 Ti3O12铁电薄膜,并且对其性能进行了研究.测量不同退火温度下得到的Ag/BTO/p-Si结构的C-V曲线,结果表明Bi4 Ti3O12薄膜在合适的制备工艺下可望实现极化型存储.
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| 关 键 词： | Bi4 Ti3O12 铁电薄膜 Sol-Gel法 C-V特性 |
C-V Characteristics of Bi4Ti3O12 Thin Films Deposited on p-Si Substrate |
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| Abstract.C-V Characteristics of Bi4Ti3O12 Thin Films Deposited on p-Si Substrate[J].Journal of Materials Science and Engineering,2005,23(1):74-76. |
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| Authors: | Abstract |
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| Abstract: | Bismuth Titanate (Bi4Ti3 O12 ) thin films were fabricated on p-Si substrates by Sol-Gel method. The effect of annealingtemperature on physical structure and ferroelectric properties of Bi4Ti3O12 thin films has been investigated. The X-ray diffraction (XRD)results show that the single perovskite phase of Bi4 Ti3 O12 can be obtained at 600℃. This metal-ferroelectric-semiconductor structure showeda capacitor-voltage (C-V) hysteresis due to ferroelectric polarization. |
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| Keywords: | Ferroelectric thin films Bi_4Ti_3O_(12) Sol-Gel method C-V characteristics |
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