硅微通道板电子倍增器

本文采用感应耦合等离子体刻蚀机(ICP)和低压化学气相淀积(LPCVD)技术制备了硅微孔列阵和连续打拿极,得到具有一定性能的硅微通道板.同时分析讨论了微孔列阵的表面形貌、反应离子刻蚀的尺寸效应以及电子增益系数等问题.与传统工艺相比,新工艺将微通道板基体材料与打拿极材料的选择分开、微孔列阵形成和连续打拿极制作过程分开,以MCP性能的突破找到了新途径.

Electron Multiplier of Si Microchannel Plate

A silicon microchannel array and continuum dynode was prepared by processes of Multiplex Inductively Coupled Plasma (ICP) and LPCVD respectively to form a silicon microchannel plate (Si-MCP) with 15 μm of through-hole diameters,16.8 of aspect ratio,and 110 of electron gain at 400V of working voltage.The microchannel topography,dimension effects and electron gain coefficient were analyzed and discussed.In new preparation of MCP,the matrix and dynode materials selections of the new microchannel plates was independent,and no effects existed between their forming processes.By comparing the electron gain of the prepared silicon microchannel plate with conventional one,we found the electron gain of Si-MCP was larger than glass MCP.Though there were some problems to be solved in the manufacture of electron multiplier of Si-MCP,it was expected that Si-MCP would be a new approach to enhance the performances of MCP and the quality of image devices.