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一种基于硅基MEMS三维异构集成技术的T/R组件
引用本文:陈兴,张超,李晓林,赵永志.一种基于硅基MEMS三维异构集成技术的T/R组件[J].太赫兹科学与电子信息学报,2024,22(3):331-336.
作者姓名:陈兴  张超  李晓林  赵永志
作者单位:中国电子科技集团公司 第十三研究所,河北 石家庄 050051
摘    要:基于硅基微电子机械系统(MEMS)三维异构集成工艺,设计并制作了用于相控阵天线系统的三维堆叠式Ku波段双通道T/R组件。该组件由两层硅基结构通过球栅阵列(BGA)植球堆叠而成,上下两层硅基封装均采用5层硅片通过硅通孔(TSV)、晶圆级键合工艺实现。组件集成了六位数控移相、六位数控衰减、串转并、电源调制、逻辑控制等功能,最终组件尺寸仅为15 mm×8 mm×3.8 mm。测试结果表明,在Ku波段内,该组件发射通道饱和输出功率大于24 dBm,单通道发射增益大于20 dB,接收通道增益大于20 dB,噪声系数小于3.0 dB。该组件性能好,质量轻,体积小,加工精确度高,组装效率高。

关 键 词:微系统  硅基MEMS  收发组件  三维集成
收稿时间:2023/7/28 0:00:00
修稿时间:2023/9/26 0:00:00

A T/R module based on silicon-based MEMS 3D integration technology
CHEN Xing,ZHANG Chao,LI Xiaolin,ZHAO Yongzhi.A T/R module based on silicon-based MEMS 3D integration technology[J].Journal of Terahertz Science and Electronic Information Technology,2024,22(3):331-336.
Authors:CHEN Xing  ZHANG Chao  LI Xiaolin  ZHAO Yongzhi
Abstract:A Ku-band dual-channel 3D integrated T/R module for array antenna system is designed and fabricated based on silicon Micro-Electro Mechanical System(MEMS) technology. The module consists of two layers of silicon-based packages stacked by Ball Grid Array(BGA). The upper and lower layers of silicon-based packages are realized by five layers of silicon wafers through Through-Silicon-Via(TSV) and wafer-level bonding. The module integrates the functions such as 6 bit digital control phase shifting, 6 bit digital control attenuation and serial-to-parallel conversion, negative voltage bias, power modulation. The finished module size is only 15 mm×8 mm×3.8 mm. The test results show that in the Ku-band, the saturation output power of the transmitting channel is greater than 24 dBm, the gain of transmitting channel reaches 20 dB, the gain of the receiving channel is greater than 20 dB, and the noise coefficient is less than 3.0 dB. The assembly bears the advantages of high performance, light weight, small volume, high machining precision and high assembly efficiency.
Keywords:microsystem  silicon-based MEMS  transceiver module  3D integration
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