| 4H-SiC MESFET的反应离子刻蚀和牺牲氧化工艺研究 |
| |
| 引用本文： | 柏松,韩春林,陈刚.4H-SiC MESFET的反应离子刻蚀和牺牲氧化工艺研究[J].电子工业专用设备,2005,34(11):59-61. |
| |
| 作者姓名： | 柏松 韩春林 陈刚 |
| |
| 作者单位： | 南京电子器件研究所,江苏,南京,210016;南京电子器件研究所,江苏,南京,210016;南京电子器件研究所,江苏,南京,210016 |
| |
| 摘 要： | 对于栅挖槽的4H-SiCMESFET,栅肖特基接触的界面经过反应离子刻蚀,界面特性对于肖特基特性和器件性能至关重要。反应离子刻蚀的SiC表面平滑度不是很好,刻蚀损伤严重。选择合适的RIE刻蚀条件减小刻蚀对半导体表面的损伤;利用牺牲氧化改善刻蚀后的表面形貌,进一步减小表面的刻蚀损伤。工艺优化后栅的肖特基特性有了明显改善,理想因子接近于1。制成的4H-SiCMESFET直流夹断特性良好,饱和电流密度达到350mAmm。
|
| 关 键 词： | 4H-SiC MESFET 反应离子刻蚀 牺牲氧化 肖特基势垒 |
| 文章编号： | 1004-4507（2005）11-0059-03 |
| 收稿时间： | 2005-10-20 |
| 修稿时间： | 2005年10月20 |
Reactive Ion Etching and Sacrificial Oxidation Processes in the Fabrication of 4H-SiC MESFETs |
| |
| BAI Song,HAN Chun-lin,CHEN Gang.Reactive Ion Etching and Sacrificial Oxidation Processes in the Fabrication of 4H-SiC MESFETs[J].Equipment for Electronic Products Marufacturing,2005,34(11):59-61. |
| |
| Authors: | BAI Song HAN Chun-lin CHEN Gang |
| |
| Abstract: | For gate recessed 4H-SiC MESFETs, the Schottky gate is formed on a plasma etched surface. The quality of the surface is crucial to the Schottky contact properties and device performance. In this study sacrificial oxidation is used as a post-etch treatment to reduce surface roughness and etch damage. Etch damage is also reduced by using proper RIE settings. Optimized etch condition and surface treatment result in improved Schottky-contact characteristics and excellent current-voltage characteristics of the 4H-SiC MESFETs. |
| |
| Keywords: | 4H-SiC MESFET |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
