红外吸收微区测量技术在半导体材料中的应用

本文采用微孔遮挡近红外吸收法，对厚度为０．５ｍｍ左右薄片半绝缘（ＳＩ）－ＧａＡｓ中深施主ＥＬ＿２进行了直接测量，使用微机控制自动测量系统对ＳＩ－ＧａＡｓ晶片中的ＥＬ＿２浓度进行了微区分布测量，利用显微傅里叶变换红外光谱测量技术对硅外延层厚度，硅中间隙氧、替位砍含量，硼、磷、硅玻璃中的硼磷含量及薄片ＳＩ－ＧａＡＳ中替位碳含量进行了ＦＴ－ＩＲ显微测量。实验结果为研究半导体材料的微区特性和均匀性提供了可靠的依据。

APPLICATION OF INFRARED ABSORPTION MICROSAMPLING MEASUREMENT TO SEMICONDUCTOR MATERIALS

Determination of the deep donor EL2 in semi-insulating GaAs thin wafers(thickness is about 0.5mm)can be directly investigated by the aperturemask near infrared absorotion method.EL2 concentration microdistribution inSI GaAs wafers can be obtained using the automatic measure ment system ofmicrocomputer control. Thicknesses of silicon epitaxial layers, inteistitialoxygen and su bst itutional carbon concentrations in silicon crystal,the concen-trations of phosphorous and boron in BPSG layers and substitutional carbon inSI-GaAs thin wafers can be measured using the FT IR microspectroscopictechniques.Experimental results provide the reliable basis to study the micro-sampling characteristics and homogeneity of semiconductor materials.