Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors |
| |
Authors: | S Dey S Joshi D Garcia-Gutierrez M Chaumont A Campion M Jose-Yacaman S K Banerjee |
| |
Affiliation: | (1) Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, 78712 Austin, TX;(2) Department of Chemical Engineering University of Texas at Austin, 78712 Austin, TX;(3) Department of Chemistry and Biochemistry University of Texas at Austin, 78712 Austin, TX |
| |
Abstract: | We demonstrate epitaxially grown high-quality pure germanium (Ge) on bulk silicon (Si) substrates by ultra-high-vacuum chemical
vapor deposition (UHVCVD) without involving growth of thick relaxed SiGe buffer layers. The Ge layer is grown on thin compressively
strained SiGe layers with rapidly varying Ge mole fraction on Si substrates resulting in several SiGe interfaces between the
Si substrate and the pure Ge layer at the surface. The presence of such interfaces between the Si substrate and the Ge layer
results in blocking threading dislocation defects, leading to a defect-free pure Ge epitaxial layer on the top. Results from
various material characterization techniques on these grown films are shown. In addition, capacitance-voltage (CV) measurements
of metal-oxide-semiconductor (MOS) capacitors fabricated on this structure are also presented, showing that the grown structure
is ideal for high-mobility metal-oxide-semiconductor field-effect transistor applications. |
| |
Keywords: | High-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) germanium-on-silicon ultra-high-vacuum chemical vapor deposition (UHVCVD) heterostructure |
本文献已被 SpringerLink 等数据库收录! |