GaN晶片电化学腐蚀表面摩擦磨损特性

目的 研究GaN晶片腐蚀表面的摩擦磨损行为，分析电化学腐蚀条件及介质环境对摩擦磨损行为的影响。方法 对不同条件电化学腐蚀后的GaN晶片表面进行摩擦磨损实验，通过腐蚀表面的摩擦磨损行为分析电解质溶液(NaOH\Na2S2O8\H3PO4)和腐蚀电位对GaN晶片腐蚀效果的影响，以及腐蚀表面材料的磨损去除特性。结果 水介质的润滑作用能有效保持摩擦因数曲线的平稳;不同电解质溶液电化学腐蚀的GaN晶片表面摩擦磨损存在明显差异，摩擦磨损区域沟槽尺寸和磨损率的顺序为NaOH>Na2S2O8>H3PO4;腐蚀电位磨损实验结果表明，腐蚀电位越高，摩擦因数越大，磨损率越大，磨损沟槽表面缺陷越多;通过电化学工作站，测试分析了极化曲线，得到电化学腐蚀速率顺序为NaOH>Na2S2O8>H3PO4，与材料去除磨损率规律一致。结论 摩擦表面的磨损特性表明，腐蚀表面摩擦磨损率越大，磨损区域的缺陷越多，对应的电化学腐蚀速率越快，表面腐蚀作用越强，在磨损过程中材料越容易被去除。在电化学腐蚀表面摩擦磨损过程中，磨料的引入可明显改变腐蚀表面的摩擦磨损特性，硬质金刚石磨料能显著增大表面磨损率，摩擦因数增大，且曲线波动大，磨损区域的缺陷增多，材料去除呈现明显的脆性断裂痕迹;软质硅溶胶磨料相较于金刚石磨料，其磨损率变小，但摩擦因数曲线更平稳，磨损区域的磨损缺陷减少，表面材料呈现明显的塑性域去除。

Friction and Wear Characteristics of Electrochemically Corroded Surfaces of GaN Wafers

GaN wafer is a chemically stable semiconductor material. Electrochemical action can effectively corrode the surface of GaN wafer. By choosing different electrochemical corrosion electrolyte solutions and different corrosion potentials, the electrochemical corrosion effect on the wafer surface can be regulated. In this paper, the friction and wear characteristics of electrochemically corroded GaN wafer surfaces were studied in order to better understand the material removal mechanism of electrochemical mechanical polishing on the surface of GaN wafers.