| 改善功率MOSFET器件UIS测试能力的方法 |
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| 引用本文： | 顾晓健.改善功率MOSFET器件UIS测试能力的方法[J].电子工程师,2008,34(8):15-17. |
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| 作者姓名： | 顾晓健 |
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| 作者单位： | 万代半导体(上海)有限公司,上海,201203 |
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| 摘 要： | 介绍了功率MOSFET器件的UIS（非钳位感应开关）测试原理及重要性，通过实际案例，解释UIS与产品质量之间相互关系，分析影响UIS能力的因素，提出改善功率MOSFET器件的3种方法，即改善contact工艺、减小RR，改变设计。实际案例中的两种MOSFET器件A和B应用了这3种方法的组合，使功率MOSFET器件的UIS能力和测试合格率有了很大的提升。
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| 关 键 词： | POWER MOSFET UIS 导通电阻 |
A Study on Methods to Improve the UIS Capacity for Power MOSFET Testing |
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| GU Xiaojian.A Study on Methods to Improve the UIS Capacity for Power MOSFET Testing[J].Electronic Engineer,2008,34(8):15-17. |
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| Authors: | GU Xiaojian |
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| Affiliation: | GU Xiaojian (Alpha ＆ Omega Semiconductor ( Shanghai) Ltd, Shanghai 201203, China) |
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| Abstract: | The test principle and the importance of MOSFET UIS （Unclamped Inductive Switching） are introduced in this paper. Through the actual case study of a company, the relationship of UIS performance and the product quality is explained. The factors which effect the UIS performance are analyzed in detail. Three methods to improve the UIS performance are presented in the paper, namely, improvement in contact processing, reduction of RB and changing of the device design. The UIS capability and the test yield of 2 actual devices （ A ＆ B） were successfully improved by the combination of those approaches. |
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| Keywords: | POWER MOSFET UIS |
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