| PNiTa-PZT三元系压电陶瓷性能 |
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| 引用本文： | 李庆利,曹建新,赵丽媛,高传平,范冠锋.PNiTa-PZT三元系压电陶瓷性能[J].电子元件与材料,2009,28(1). |
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| 作者姓名： | 李庆利 曹建新 赵丽媛 高传平 范冠锋 |
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| 作者单位： | 贵州大学,化学工程学院,贵州,贵阳,550003 |
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| 基金项目： | 贵州省优秀科技教育人才省长基金，贵州省科技攻关项目 |
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| 摘 要： | 采用传统陶瓷工艺制备了0.02Pb(Ni1/3Ta2/3)O3+0.98Pb(ZrxTi1–x)O3(x=0.50~0.55,PNiTa-PZT)三元系压电陶瓷,研究了n(Zr)/n(Ti)变化对陶瓷性能的影响。结果表明:随其比值的变化,陶瓷样品均为钙钛矿结构,且对陶瓷显微结构影响不大;当n(Zr)/n(Ti)为52/48时,陶瓷具有较优的压电、介电性能:kp为0.583,d33为266pC/N,tC为394℃,tanδ为0.0055,ε3T3/ε0为1297。其中tC比目前文献报道的PZT基压电材料高30~50℃,有望在高温压电陶瓷领域获得应用。
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| 关 键 词： | 无机非金属材料 掺杂量 PNiTa-PZT 居里温度 压电介电性能 |
The properties of PNiTa-PZT ternary system piezoelectric ceramics |
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| LI Qingli,CAO Jianxin,ZHAO Liyuan,GAO Chuanping,FAN Guanfeng.The properties of PNiTa-PZT ternary system piezoelectric ceramics[J].Electronic Components & Materials,2009,28(1). |
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| Authors: | LI Qingli CAO Jianxin ZHAO Liyuan GAO Chuanping FAN Guanfeng |
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| Affiliation: | School of Chemical Engineering;Guizhou University;Guiyang 550003;China |
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| Abstract: | 0.02Pb(Ni1/3Ta2/3)O3+0.98Pb(ZrxTi1–x)O3 (x = 0.50~0.55,PNiTa-PZT) ternary system piezoelectric ceramics were prepared by traditional ceramic technology, and the effects of PNiTa doping amount and different n(Zr)/n(Ti) on the properties of ceramics were studied. The results show that all the ceramic samples have perovskite structures, and little effects on the microstructure of ceramics with different n(Zr)/n(Ti). The ceramic with better piezoelectric and dielectric properties of kp = 0.583,d33 = 266 pC/N,tC = 394 ℃,tanδ = 0.005 5 and ε 3T3/ε0 = 1 297 can be obtained when n(Zr)/n(Ti) is 52 /48,where the parameter of tC is 30~50 ℃ higher than PZT-based piezoelectric materials reported in present literatures. It could be used in high temperature piezoelectric ceramics field. |
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| Keywords: | PNiTa-PZT |
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