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基于MOVPE和MBE法生成的GaN薄膜的反射、透射光谱测量
引用本文:齐学义,李晨晨,杨国来,蔡丽霞.基于MOVPE和MBE法生成的GaN薄膜的反射、透射光谱测量[J].兰州理工大学学报,2007,33(5):162-164.
作者姓名:齐学义  李晨晨  杨国来  蔡丽霞
作者单位:1. 兰州理工大学,流体动力与控制学院,甘肃,兰州,730050
2. 兰州理工大学,机电工程学院,甘肃,兰州,730050
摘    要:使用紫外-可见光分光光度计,研究用金属有机物气相外延(MOVPE)方法生成在蓝宝石衬底上的GaN薄膜的反射光谱、透射光谱以及用分子束外延(MBE)方法生成在碳化硅衬底上GaN薄膜的反射光谱,结果表明,所测的GaN薄膜和体材料的光学吸收边出现在364 nm附近,对应的禁带宽度为3.41 eV.在两种不同衬底上,薄膜的反射谱由于材料晶格常数和热膨胀系数的不同有所差别.

关 键 词:氮化镓薄膜  反射光谱  透射光谱
文章编号:1673-5196(2007)05-0162-03
修稿时间:2007-06-12

Reflection and transmission spectra measurement of GaN thin film generated by means of MOVPE and MBE procedures
QI Xue-yi,LI Chen-chen,YANG Guo-lai,CAI Li-xia.Reflection and transmission spectra measurement of GaN thin film generated by means of MOVPE and MBE procedures[J].Journal of Lanzhou University of Technology,2007,33(5):162-164.
Authors:QI Xue-yi  LI Chen-chen  YANG Guo-lai  CAI Li-xia
Affiliation:1. College of Fluid Power and Control, Lanzhou Univ. of Teeh. , Lanzhou 730050, China; 2. College of Meehano-Eleetronie Engineering, Lanzhou Univ. of Teeh. , Lanzhou 730050, China
Abstract:The reflection and transmission spectra of GaN thin film grown on the sapphire substrate by using metal-organic vapor phase epitaxy were investigated with ultraviolet visible spectrophotometry.At the same time the reflection spectrum of GaN thin film grown on the SiC layer by means of molecular beam epitaxy was also studied.The results showed that the optic absorption edge took place at wave-length of 364 nm,corresponding to the direct band gap of 3.41 eV in width.The reflection spectra of the thin films on the both different substrates were different due to the difference in lattice constant and thermal expansion coefficient of the materials.
Keywords:GaN thin film  reflection spectrum  transmission spectrum
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