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Tuning bond contents in B–C–N films via temperature and bias voltage within RF magnetron sputtering |
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| Authors: | Chunqiang Zhuang Jijun Zhao Fuchao Jia Changyu Guan Zhanling Wu Yizhen Bai Xin Jiang |
| Affiliation: | aLaboratory of Materials Modification by Laser, Electron, and Ion Beams, Dalian University of Technology, Dalian 116024, China;bCollege of Advanced Science and Technology, Dalian University of Technology, Dalian 116024, China;cInstitute of Materials Engineering, University of Siegen, Paul-Bonatz-Straße 9-11, D-57076 Siegen, Germany |
| Abstract: | Using radio frequency reactive magnetron sputtering technique with boron and graphite targets, amorphous B–C–N films were synthesized on the silicon (100) substrate applied with different temperatures and bias voltages. The structural and bonding characteristics of the synthesized films were characterized by Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The bond contents in the B–C–N films show remarkable dependence on the bias voltage applied to the substrate at 400 °C. |
| Keywords: | Magnetron sputtering Bond content BCN |
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