Characteristics of nitrogen doped diamond-like carbon thin films grown by microwave surface-wave plasma CVD |
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| Authors: | Hare Ram Aryal Sudip Adhikari Sunil Adhikary Hideo Uchida Masayoshi Umeno |
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| Affiliation: | aDepartment of Electrical and Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487–8501 Japan;bDepartment of Hydrology and Meterology, Tri-Chandra Campus, Tribhuvan University, G.P.O. 8974, CPC 122, Kathmandu, Nepal;cDepartment of Electronics and Information Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487–8501, Japan |
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| Abstract: | Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on p-type silicon (p-Si) and quartz substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at low temperature (< 100 °C). For films deposition, argon (Ar: 200 sccm), acetylene (C2H2:10 sccm) and nitrogen (N: 5 sccm) were used as carrier, source and doping gases respectively. DLC:N thin films were deposited at 1000 W microwave power where as gas composition pressures were ranged from 110 Pa to 50 Pa. Analytical methods such as X-ray photoelectron spectroscopy (XPS), UV-visible spectroscopy, FTIR and Raman spectroscopy were employed to investigate the chemical, optical and structural properties of the DLC:N films respectively. The lowest optical gap of the film was found to be 1.6 eV at 50 Pa gas composition pressure. |
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| Keywords: | Diamond-like carbon Nitrogen Surface-wave plasma Optical properties |
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