| 金属有机沉积法制备SrTiO3薄膜 |
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| 引用本文： | 罗清威,冉阿倩,李凤华,李英楠,洪成哲,樊占国.金属有机沉积法制备SrTiO3薄膜[J].沈阳黄金学院学报,2011(3):193-197. |
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| 作者姓名： | 罗清威 冉阿倩 李凤华 李英楠 洪成哲 樊占国 |
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| 作者单位： | [1]东北大学材料与冶金学院,沈阳110819 [2]金策工业综合大学物理工程研究所,朝鲜平壤 |
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| 基金项目： | 中央高校基本科研业务费专项资金资助（N100602010） |
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| 摘 要： | 采用金属有机沉积（MOD）法制备了SrTiO3（STO）外延薄膜作为YBa2Cu3O7-δ涂层导体的缓冲层.以乙酸锶、钛酸丁酯为前驱物配制了Sr离子浓度为0.125 mol.L-1的SrTiO3前驱溶液.研究了950℃下不同烧结时间（90、120、150 min）对在双轴织构的Ni-W（200）金属基带上沉积STO外延薄膜晶体取向和微观形貌的影响.结果表明,在950℃氩氢混合气氛（Ar-4%H2）下适宜于STO薄膜外延生长的最佳烧结时间为120 min;STO缓冲层薄膜表面平整致密,无裂纹和孔洞,具有良好取向,可作为YBa2Cu3O7-δ涂层导体的缓冲层.
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| 关 键 词： | 金属有机沉积 涂层导体 SrTiO3 缓冲层 烧结时间 |
Preparation of SrTiO3 thin films by metal organic deposition method |
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| Authors: | LUO Qing-wei RAN A-qian LI Feng-hua LI Ying-nan HONG Song-chol FAN Zhan-guo |
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| Affiliation: | 1.School of Materials ＆ Metallurgy,Northeastern University,Shenyang 110819,China; 2.Institute of physical engineering,Kim Chaek university of technology,Pyongyang,DPR KOREA) |
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| Abstract: | Epitaxial SrTiO3 thin films were prepared by metal organic deposition（MOD） method as buffer layer for YBa2Cu3O7-δ coated conductor.Strontium acetate（（C2H3O2）2Sr） and tetrabutyl titanate（C16H36O4Ti） were used as precursors to synthesize the precursor solution where the Sr concentration is 0.125 mol · L-1.The effect of sintering time（90、120、150 min at 950 ℃） on SrTiO3 epitaxial thin films crystal orientation and morphology prepared on the biaxially textured Ni-5at.%W（200） alloy substrates by MOD method was studied.The results showed that the best sintering time is 120 min for the SrTiO3 epitaxial growth under Ar-4%H2 atmosphere and at 950 ℃.The SrTiO3 buffer layer is smooth,dense,crack-free,pinhole-free and well-oriented.It can be a promising buffer layer for YBa2Cu3O7-δ coated conductor. |
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| Keywords: | metal organic deposition（MOD） coated conductor SrTiO3 buffer layer sintering time |
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