硼氢协同掺杂Ib型金刚石大单晶的高温高压合成与电学性能研究

在压力6.0 GPa和温度1600 K条件下, 利用温度梯度法研究了(111)晶面硼氢协同掺杂Ib型金刚石的合成. 傅里叶红外光谱测试表明: 氢以sp³杂化的形式存在于所合成的金刚石中, 其对应的红外特征吸收峰位分别位于2850 cm^-1和2920 cm^-1处. 此外, 霍尔效应测试结果表明: 所合成的硼氢协同掺杂金刚石具有p型半导体材料特性. 相对于硼掺杂金刚石而言, 由于氢的引入导致硼氢协同掺杂金刚石电导率显著提高. 为了揭示硼氢协同掺杂金刚石电导率提高的原因, 对不同体系进行了第一性原理理论计算, 计算结果表明其与实验结果符合. 该研究对金刚石在半导体领域的应用有重要的现实意义.

Synthesis and electrical properties study of Ib type diamond single crystal co-doped with boron and hydrogen under HPHT conditions

Diamond is well known for its excellent properties, such as its hardness, high thermal conductivity, high electron and hole mobility, high breakdown field strength and large band gap (5.4 eV), which has been extensively used in many fields. However, its application in semiconductor area needs to be further understood, because it is irreplaceable by conventional semiconductor materials, especially in the extreme working conditions. In order to obtain diamond semiconductor with excellent electrical performances, diamond crystals co-doped with boron (B) and hydrogen (H) are synthesized in an FeNi-C system by temperature gradient growth (TGG) at pressure 6.0 GPa and temperature 1600 K. Fourier infrared spectra (FTIR) measurements displayed that H is the formation of sp³ CH₂-antisymmetric and sp³ -CH₂-symmetric vibrations in the obtained diamond. Furthermore, the corresponding absorption peaks of H element are located at 2920 cm^-1 and 2850 cm^-1, respectively. Hall effects measurements demonstrated that the co-doped diamond exhibited that p- type material semiconductor performance, and the conductivity of the co-doped diamond is significantly enhanced comparing tocompared with the conductivity of the B-doping diamond. The results indicated that the Hall mobility mobilities is nearly equivalent between B-doped and co-doped diamond crystals are nearly equivalent, while the concentrations of the carriers and conductivity of the co-doped diamonds are higher than those of the B-doped diamond crystals. It is also noticed that the nitrogen concentration of the co-doped diamond decreases obviously, when the H and B are introduced into the diamond structure. Additionally, the change of the conductivity is investigated by first-principles calculation. In the B-doping diamond, two impurity levels are located in the forbidden band with small gaps. These impurity states above the Fermi level couldcan trap the photo-excited electrons, while those below Fermi level can trap the photo-excited vacancies, improving the transfer of the photo-excited carriers to the reactive sites. With the H co-doped diamond, the two impurity states moved to the valance band maximum and merged into each other, which extends the valance band and improves the charge transfer efficiency. From the perspective of energy band, for the co-doped of B and N atoms co-doped diamond, the impurity states are contributed by N/B-2p states while the overlop and splitting of N/B-2p in the band gap appeared. For the H co-doped diamond, the splitting of the N/B-2p states vanishes and shifts to the lower energy level, which was due to the fact that the excess charge transferred from N to H. The calculation results above are in qualitatively agreement with experimental results. We hope that this investigation would be meaningful for the application of diamond in semiconductor field.