Conversion Losses in Schottky-Barrier Diode Mixers in the Submillimeter Region

Conversion Iosses, both intrinsic and parasitic, are calculated for Schottky diode mixers in the submillimeter region, and optimum mixer performance is shown to depend strongly upon operating frequency and upon diode diameter. The implications for high-frequency diode fabrication are discussed, and a comparison is made of the expected performance of GaAs, Si, and InSb Schottky diodes at frequencies up to 5 THz.