| 包埋法制备碳/碳复合材料碳化硅涂层缺陷的形成机制及控制 |
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| 引用本文： | 焦更生,李贺军,李克智,王闯,魏剑.包埋法制备碳/碳复合材料碳化硅涂层缺陷的形成机制及控制[J].硅酸盐学报,2007,35(6):721-724. |
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| 作者姓名： | 焦更生 李贺军 李克智 王闯 魏剑 |
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| 作者单位： | 西北工业大学,碳/碳复合材料研究所,西安,710072 |
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| 基金项目： | 国家自然科学基金
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国家重点基础研究发展计划(973计划) |
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| 摘 要： | 用包埋法在碳/碳(C/C)复合材料表面制备了碳化硅(SiC)涂层及改性涂层.用扫描电镜观察涂层的微观形貌.从理论上探讨了涂层缺陷的形成机制,分析了改性剂对SiC涂层形貌、晶粒尺寸的影响.结果表明:添加改性剂后,涂层晶粒变小,涂层致密,表面未出现裂纹,断面孔洞的数量减少,尺寸减小.在1 773K的抗氧化性比未添加改性剂涂层的显著提高.
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| 关 键 词： | 碳化硅涂层 裂纹 包埋法 |
| 文章编号： | 0454-5648（2007）06-0720-04 |
| 修稿时间： | 2006-07-152007-02-03 |
MECHANISM OF DEFECT FORMATION AND CONTROL OF SILICON CARBIDE COATING FOR CARBON/CARBON COMPOSITES MADE BY THE PACK CEMENTATION METHOD |
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| JIAO Gengsheng,LI Hejun,LI Kezhi,WANG Chuang,WEI Jian.MECHANISM OF DEFECT FORMATION AND CONTROL OF SILICON CARBIDE COATING FOR CARBON/CARBON COMPOSITES MADE BY THE PACK CEMENTATION METHOD[J].Journal of The Chinese Ceramic Society,2007,35(6):721-724. |
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| Authors: | JIAO Gengsheng LI Hejun LI Kezhi WANG Chuang WEI Jian |
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| Abstract: | Silicon carbide(SiC)and modified silicon carbide coatings were produced by a pack cementation technique on surface of carbon/carbon(C/C)composites.The micro-structure of the as-received coating was investigated by a scanning electron microscope.The formation mechanism of coating defects and effect of modifier on microstructure of the SiC coating and the size of SiC particles are discussed as well.The results show that the size of the SiC particles on the modified coating is smaller and the coating is com-pacted.No micro-cracks appear on the surface of modified SiC coating,there are fewer pores in the cross section and the particles are smaller.Comparing with the no modifier coating,the anti-oxidation resistance of the modified SiC coating is greatly improved at 1 773 K. |
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| Keywords: | silicon carbide coating micro-crack pack cementation method |
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