硅烯上的克莱因隧穿

基于硅烯的四带低能有效哈密顿量，通过求解狄拉克方程研究了单层硅烯上的势垒隧穿，得出了硅烯中隧穿几率随入射角度的变化关系。当入射方向为正入射时，电子完全透射，隧穿几率不随隧穿势垒宽度和门电压改变而变化，表明在硅烯中可以观察到克莱因隧穿现象。进一步研究了硅烯在常规半导体相、拓扑绝缘体相以及半金属相等不同物相中的量子输运，发现不同的物相对于电子的隧穿影响不大。该研究有助于澄清硅烯上克莱因隧穿的特性，并为基于硅烯的强鲁棒性量子隧穿器件设计提供思路。

Klein tunneling in silicene

We theoretically study the quantum tunneling in silicene based on the four-band low-energy effective Hamiltonian. We show the dependence of the tunneling probability on the incidence angle by solving the Dirac equation. We find that electrons are perfectly transmitted when the incident angle is the normal incidence. The tunneling probability is independent of the tunneling barrier width and gate voltage, which indicates the Klein tunneling in silicene. Besides, we have also studied the quantum tunneling of silicene in various phases such as the conventional semiconductor phase, topological insulator phase, and semi-metal phase. It is found that the quantum tunneling shows almost the same behavior in these different phases. Thus, our work helps clarify the characteristics of Klein tunneling in silicene and may inspire possible robust quantum tunneling devices based on silicene.