SOI基外延纯Ge材料的生长及表征

利用超高真空化学气相沉积系统采用低温-高温两步法外延Ge材料.我们先在低温下生长硅锗作为过渡缓冲层利用其界面应力限制位错的传播,然后在低温下生长的纯锗层,接着高温生长纯锗,最后在SOI基上成功的外延出了高质量的纯锗层,测试结果表明厚锗层的晶体生长质量很好,芯片表面也很平整,表面粗糙度5.5nm.

Growth and characterization of SOI based epitaxial pure Ge materials

The tensile stained Ge grown on a silicon-on-insulator(SOI)substrate were fabricated successfully by ultra-high chemical wapor deposition.Firsty, a thin relaxed low-temperature SiGe buffer was grown followed by a low-temperature Ge layer,then,a high temperature Ge layer was grown at 600℃.High crystal quality and low surface roughness of 0.55nm of the Ge layer are characterized.