| 窄禁带半磁半导体Hg_(1-x)Mn_xTe的磁化强度 |
| |
| 引用本文： | 陈辰嘉,王学忠,刘继周,R.R.Galazka.窄禁带半磁半导体Hg_(1-x)Mn_xTe的磁化强度[J].半导体学报,1989,10(7):529-533. |
| |
| 作者姓名： | 陈辰嘉 王学忠 刘继周 R.R.Galazka |
| |
| 作者单位： | 北京大学物理系，北京大学物理系，北京大学物理系，波兰科学院物理研究所 北京，北京，北京 |
| |
| 摘 要： | 本文报道用提拉法测量Hg_(1-x)Mn_xTe单晶磁化强度的实验结果.在低温1.5K-30K范图内,磁场强度为0-7万高斯下,测量了不同组分x=0.06,0.08,0.12,0.16的Hg_(1-x)Mn_xTe磁化强度与组分,温度和磁场强度的关系.采用分子场近似模型,用类布里渊函数,最小二乘法对实验结果进行了拟合和分析.结果表明在本文x值范围内,理论与实验符合较好,证实了锰离子间存在强的反铁磁交换耦合.
|
| 关 键 词： | 磁化强度 窄禁带 半磁半导体 |
Magnetization of Narrow GaP Semimagnetic Semiconductor Hg_(1-x)Mn_x Te |
| |
| Chen Chenjia/.Magnetization of Narrow GaP Semimagnetic Semiconductor Hg_(1-x)Mn_x Te[J].Chinese Journal of Semiconductors,1989,10(7):529-533. |
| |
| Authors: | Chen Chenjia/ |
| |
| Affiliation: | Chen Chenjia/Department of Physics,Peking University,BeijingWang Xuezhong/Department of Physics,Peking University,BeijingLiu Jizhou/Department of Physics,Peking University,BeijingR. R. Galazka/Institute of Physics,Polish Academy of Sciences |
| |
| Abstract: | The magnetization measurements of Hg_(1-x)Mn_xTe for samples with x=0.06,0.08, 0.12,0.16 in the temperature range 1.5K to 30K and magnetic fields up to 7T have been carried outby using the extraction method.Based on the mean field theory,a modified Brillouin func-tion is fitted with the data very well over the entire range.The inverse susceptibility is showna Curie-Weiss behavior even at high field with a paramagnetic Curie temperature and indica-tes that there is an antiferromagnetic exchange coupling among Mn ions. |
| |
| Keywords: | Magnetization Narrow-gap semimagnetic semiconductor Exchange interaction Mn~(++) ions cluster Modified Brillouin function |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
