光源掩模协同优化的原理与应用

当半导体技术节点缩小至14 nm及以下时,光刻技术也逐渐接近了其物理极限.光源掩模协同优化(SMO)作为一种新型的分辨率增强技术,能够显著提升极限尺寸下半导体光刻的重叠工艺窗口,有效延伸当前常规光刻技术的生存周期.综述了SMO这一技术,分析了SMO的原理,介绍了该技术的发展和在半导体制造工艺中的应用,重点探讨了其在先进光刻节点研发中的应用,并对其挑战和发展趋势进行了展望,认为SMO不仅是193 nm浸润式光刻技术的重要组成部分,也将是EUV光刻中必不可少的一种技术.

Mechanism and Applications of Source Mask Optimization

As the semiconductor technology node shrinks to 14 nm and below,lithographic technology begins to attach the physical limit as well.As a novel resolution enhancement technique,source mask optimization (SMO) can significantly improve lithographic process windows under extreme conditions,which will extend the lifetime of current conventional lithographic technology effectively.The SMO technique is reviewed and the mechanism of SMO is analyzed.After that,its development and application in semiconductor manufacturing processes,especially the application in advanced lithography node development,are introduced.Finally,the challenges and development trend of the SMO technique are prospected.It's considered that the SMO is a significant component of the 193 nm immersion lithography technology,and it will be an essential technique in EUV lithography.