三氯硅烷的制备及精制工艺进展

重点描述了三氯硅烷（HSiCl3）的制备和精制工艺。HSICl3。的工业化合成方法主要有硅氢氯化法和四氯化硅-氢还原法2种，HSiCl3的精制方法主要有精馏法、吸附法和多步精制法，其中多步精制法又可分为冷凝-精馏法、反应-精馏法、吸附-精馏法等。结合使用先进的精制工艺，产品可满足高端电子产品的需求。同时介绍了高纯HSiCl3的国际生产情况，指出中国目前HSiCl3产品的纯度只能满足中低端应用，今后应加紧开发高纯度级别的产品，缩短与国外先进水平的差距。

Progress on preparation and purification of trichlorosilane

The preparation and purification of trichlorosilane were described in detail. The industrial synthesis method includes Si hydrochlorination method and SiCl4 - H2 reduction method. The purification method includes rectification method, adsorption method and multi - purification method. The multi - purification method includes condensation - rectification method,reaction- rectification method and adsorption- rectification method. Corporated with advanced purification processes, the products which could meet the requirements of advanced electronic products were obtained. Meanwhile the international production status of high - purity HSiCl3 is introduced. It is pointed out that the HSiCl3 with the current purity made in China can only meet the requirements of middle and low grade electronic products. Therefore, the development of high purity product of HSiCl3 should be strengthened in order to shorten the gap with the foreign advanced level.