Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs |
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| Authors: | Hosogi K Nakano N Minami H Katoh T Nishitani K Otsubo M Koksumata M Nagahama K |
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| Affiliation: | Optoelectronic & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo, Japan; |
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| Abstract: | A process for fabricating T-shaped gates using photo/EB hybrid exposure has been developed. This process is suitable for mass production of high performance HEMTs. A 0.2 mu m T-shaped gate HEMT exhibits very low noise figures of 0.40 and 1.1 dB at 12 and 40 GHz, respectively, and high reliability.<> |
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