Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering |
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| Authors: | MA de la Rubia P Leret A del Campo RE Alonso AR López-Garcia JF Fernández J de Frutos |
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| Affiliation: | 1. Electroceramic Department, Instituto de Cerámica y Vidrio, CSIC, Kelsen 5, 28049 Madrid, Spain;2. Physics Department, Fac. Cs. Exactas, Universidad Nacional de la Plata, Calles 115 y 49, 1900 La Plata, Argentina;3. Física Aplicada a las Tecnologías de la Información, ETSI Telecomunicación (UPM), Ciudad Universitaria, s/n, 28040 Madrid, Spain;1. School of Materials Science and Engineering, Xi''an University of Technology, Xi''an 710048, PR China;2. Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou 450002, PR China;1. Key Laboratory of Engineering Dielectrics and its Application, Ministry of Education, College of Electrical & Electronic Engineering, Harbin University of Science and Technology, Harbin 150080, PR China;2. School of Applied Science, Harbin University of Science and Technology, Harbin 150080, PR China;3. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, PR China;1. Research Group Materials, Microelectronics, Acoustics, Nanotechnologies (GREMAN), UMR 7341 Université François Rabelais/CNRS, Faculty of Sciences and Techniques, Parc de Grandmont, 37200 Tours, France;2. SRT Microcéramique, Rue Mons, 41100 Vendôme, France;1. GREMAN, UMR 7341 CNRS, Université François Rabelais, UFR Sciences et Techniques, Parc de Grandmont, 37200 Tours, France;2. SRT Microcéramique, Rue Mons, 41100 Vendôme, France;1. Faculty of Materials and Energy, Southwest University, Chongqing 400715, China;2. College of Electromechanical Engineering, Chongqing College of Humanities, Science and Technology, Chongqing 401524, China |
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| Abstract: | CaCu3(Ti4?xHfx)O12 ceramics (x = 0.04, 0.1 and 0.2) were prepared by conventional synthesis (CS) and through reactive sintering (RS), in which synthesis and sintering of the material take place in one single step. The microstructure and the dielectric properties of Hf-doped CCTO (CCTOHf) have been studied by XRD, FE-SEM, AFM, Raman and impedance spectroscopy (IS) in order to correlate the structure, microstructure and the electrical properties. Samples prepared by reactive sintering show slightly higher dielectric constant than those prepared by conventional synthesis in the same way than the pure CCTO. Dielectric constant and dielectric losses decrease slightly increasing Hf content. For CCTOHf ceramics with x > 0.04 for CS and x > 0.1 for RS, a secondary phase HfTiO4 appears. As expected, the reactive sintering processing method allows a higher incorporation of Hf in the CCTO lattice than the conventional synthesis one. |
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