Influence of the intrinsic layer characteristics on a-Si:H p–i–n solar cell performance analysed by means of a computer simulation |
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Authors: | Alessandro Fantoni Manuela Viera Rodrigo Martins |
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Affiliation: | a ISEL, Rua Conselheiro Emídio Navarro, 1900 Lisboa, Portugal;b UNINOVA-CEMOP, Campus of Science and Technology, New University of Lisbon, Quinta da Torre, 2825 Monte de Caparica, Portugal |
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Abstract: | In this paper a set of one-dimensional simulations of a-Si:H p–i–n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift–diffusion and the generation–recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy. |
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Keywords: | a-Si:H solar cells Numerical simulation Photo-current optimization |
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