| 退火条件对FeSiCoB薄膜应力阻抗效应的影响 |
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| 引用本文： | 谌贵辉,杨国宁,张万里,彭斌,蒋洪川.退火条件对FeSiCoB薄膜应力阻抗效应的影响[J].电子元件与材料,2005,24(5):5-7. |
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| 作者姓名： | 谌贵辉 杨国宁 张万里 彭斌 蒋洪川 |
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| 作者单位： | 1. 电子科技大学微电子与固体电子学院,四川,成都,610054;西昌学院物理系,四川,西昌,615022
2. 电子科技大学微电子与固体电子学院,四川,成都,610054 |
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| 摘 要： | 为了提高FeCoSiB薄膜和FeCoSiB/Cu/FeCoSiB多层膜的磁弹性能,利用磁控溅射方法在玻璃基片上沉积制备薄膜样品,并在真空中退火。测试了不同温度退火后,薄膜样品的应力阻抗效应。结果表明,退火处理条件对薄膜的应力阻抗效应有较大的影响。在6.4kA·m–1磁场下,薄膜经300℃、40min退火处理后,单层FeCoSiB和多层FeCoSiB/Cu/FeCoSiB的应力阻抗效应分别为1.86%和8.30%。
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| 关 键 词： | 电子技术 磁弹性薄膜 多层膜 应力阻抗 磁控溅射 退火处理 |
| 文章编号： | 1001-2028(2005)05-0005-03 |
| 修稿时间： | 2004年12月25 |
Influence of Annealing Conditions on the Stress Impedance Effect of FeCoSiB Magnetoelastic Thin Films |
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| CHEN Gui-hui,YANG Guo-ning,ZHANG Wan-li,PENG Bin,JIANG Hong-chuan.Influence of Annealing Conditions on the Stress Impedance Effect of FeCoSiB Magnetoelastic Thin Films[J].Electronic Components & Materials,2005,24(5):5-7. |
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| Authors: | CHEN Gui-hui YANG Guo-ning ZHANG Wan-li PENG Bin JIANG Hong-chuan |
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| Abstract: | The FeCoSiB film and FeCoSiB/Cu/FeCoSiB multilayer film were deposited on glass substrates by magnetron sputtering. These samples were post-annealed in vacuum to improve the magnetoelastic property. The stress impedance effects of the as-deposited films at different annealing temperature were also investigated. The results show that the stress impedance effects obviously depend on the annealing conditions. The stress impedance effects (?Z/Z) of the FeCoSiB single-film and the FeCoSiB/Cu/FeCoSiB multilayer film both annealed at 300℃ for 40 min with 80 Oe magnetic field are 1.86% and 8.30%, respectively. |
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| Keywords: | electronic technology magnetoelastic thin films multilayer film stress impedance magnetron sputtering annealing treatment |
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