Spin Relaxation in a Two-Dimensional Electron Gas in Si Quantum Wells |
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Authors: | Z Wilamowski and W Jantsch |
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Affiliation: | (1) Institute of Physics, Polish Academy of Sciences, PL 0668 Warsaw, Poland;(2) Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria |
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Abstract: | Electron spin resonance of two-dimensional (2D) electron gas in Si/SiGe quantum wells allows to evaluate both the longitudinal and the dephasing spin relaxation time. Diakonov–Perel (DP) relaxation, caused by Bychkov–Rashba (BR) spin orbit coupling, occurs to be the dominant mechanism in high mobility samples. For low mobility the Elliott–Yaffet mechanism dominates the longitudinal spin relaxation. When the BR effect is small, inhomogeneous broadening caused by potential fluctuations is seen. We compare spin relaxation of the 2D electron gas in Si and in GaAs quantum wells with respect to applications of these materials in spintronics. |
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Keywords: | spin relaxation Rashba term conduction electron spin resonance spintronics |
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