Short-channel-effect free 0.18 μm MOSFET bytemperature-dimension combination scaling theory: design and experiment |
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| Authors: | Yokoyama M Hidaka T Sasaki K Masu K Tsubouchi K |
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| Affiliation: | Res. Inst. of Electr. Commun., Tohoku Univ., Sendai; |
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| Abstract: | We have fabricated 77 K deep-submicron MOSFETs on the basis of the temperature-dimension combination scaling theory (CST). The 77 K MOSFETs with 1-V supply voltage are designed from a 300 K MOSFET with 4-V supply voltage. The fabricated 77 K 0.18 μm device has exhibited fully scaled characteristics. The subthreshold swing (S) and the threshold voltage (Vth) of the 77 K device are found to be 1/4≈77 K/300 K of those of the 300 K device. Furthermore, S and Vth are achieved to be 27 mV/dec and 0.21 V without short-channel effect degradation |
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