Comparison of p-channel lateral insulated-gate bipolar transistorswith and without collector shorts |
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Authors: | Chow TP Baliga BJ Pattanayak DN Adler MS |
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Affiliation: | Gen. Electr. Co., Schenectady, NY; |
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Abstract: | The performances of p-channel lateral insulated-gate bipolar transistors (LIGBTs) with and without collector shorts on n- epi/n+ substrates are compared. The collector-shorted devices have a 4× improvement in turn-off time but about 1-V higher forward drop, due to a substantially reduced vertical current component. The addition of a buried layer on the emitter side increases the forward drop and reduces the turn-off time slightly for both types of LIGBTs. The presence of the collector shorts significantly improves the breakdown voltage but increases the percentage of the lateral current component, leading to a lower maximum gate controllable current |
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