In doped ZnO thin films |
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Authors: | A HafdallahF Yanineb MS Aida N Attaf |
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Affiliation: | Laboratory of Thin Films and Interface, Faculty of Science, Department of Physics, University Mentouri of Constantine 25000, Algeria |
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Abstract: | ZnO thin films were deposited by ultrasonic spray technique, zinc acetate was used as starting solution with a molarity of 0.1 M. A set of indium (In) doped ZnO (between 2 and 8 wt%) thin films were grown on glass substrate at 350 °C. The present work is focused on the influence of the doping level on the structural, optical and electrical films properties. Optical film characterization was carried by using UV-visible transmission spectroscopy, the optical gap was deduced from absorption. From X ray diffraction (XRD) analysis, we have deduced that ZnO films are formed with nanocrystalline structure with preferential (0 0 2) orientation. The grain size is increased with In doping from 28 to 37 nm. Electrical characterization was achieved using two-probes coplanar structure, the measured conductivity varies from 2.3 to 5.9 Ω cm−1 when increasing the doping level. However the optical gap is reduced from 3.4 to 3.1 eV. |
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Keywords: | ZnO Thin films Ultrasonic spray Semiconductor doping |
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