Electrical properties of amorphous high-/spl kappa/ HfTaTiO gate dielectric with dielectric constants of 40-60 |
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Authors: | Lu N Li H-J Gardner M Wickramanayaka S Kwong D-L |
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Affiliation: | Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA; |
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Abstract: | High-quality Hf-based gate dielectrics with dielectric constants of 40-60 have been demonstrated. Laminated stacks of Hf, Ta, and Ti with a thickness of /spl sim/10 /spl Aring/ each was deposited on Si followed by rapid thermal anneal. X-ray diffraction analysis showed that the crystallization temperature of the laminated dielectric stack is increased up to 900/spl deg/C. The excellent electrical properties of HfTaTiO dielectrics with TaN electrode have been demonstrated, including low interface state density (D/sub it/), leakage current, and trap density. The effect of binary and ternary laminated metals on the enhancement of dielectric constant and electrical properties has been studied. |
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