脉冲频率对HiPIMS制备TiN薄膜组织和力学性能的影响EI北大核心CSCD

为探究脉冲频率对通过高功率脉冲磁控溅射制备TiN薄膜组织力学性能的影响,选用Ti靶和N2气体,采用反应磁控溅射技术通过改变高功率脉冲磁控溅射(HiPIMS)电源脉冲频率在Si(100)晶片上制备不同种TiN薄膜。利用X射线衍射仪(XRD)、X射线光电子能谱仪和扫描电子显微镜(SEM)对所制薄膜晶体结构和成分、表面和断面形貌进行分析,利用纳米压痕仪对薄膜的硬度和弹性模量进行表征,并计算H/E和H^(3)/E^(2)。结果表明,高离化率Ti离子轰击促使薄膜以低应变能的晶面优先生长,所制TiN薄膜具有(111)晶面择优取向。薄膜平均晶粒尺寸均在10.3 nm以下,随着脉冲频率增大晶粒尺寸增大,结晶度和沉积速率降低,柱状生长明显,致密度下降,影响薄膜力学性能。在9 kHz时,TiN薄膜的晶粒尺寸可达8.9 nm,薄膜组织致密具有最高硬度为30 GPa,弹性模量374 GPa,弹性恢复为62.9%,具有最优的力学性能。

Effects of Pulse Frequency on the Microstructure and Mechanical Property of TiN Films Prepared by HiPIMS

In order to explore the effect of pulse frequency on the mechanical properties of TiN films prepared by high-power pulsed magnetron sputtering, different kinds of TiN films are prepared on Si(100) wafers by changing the pulse frequency of High-power impulse magnetron sputtering(HiPIMS) power supply through reactive magnetron sputtering technology. The crystal structure and composition, surface and cross-sectional morphology of the films are characterized by XRD, XPS and SEM. The hardness and elastic modulus of the films are characterized by nanoindenter, and H / E and H³ / E² are calculated. The results show that the high ionization rate Ti ion bombardment promotes the preferential growth of the film with low strain energy crystal planes, and the prepared TiN film has a (111) preferred orientation. The average grain size of the films is below 10.3 nm, but as the pulse frequency increases, grain size increases, crystallinity and the deposition rate decrease, columnar growth is obvious, and the density decreases, which affects the mechanical properties of the film. At 9 kHz, the grain size of the TiN film is 8.9 nm, and the film has the densest structure with the highest hardness of 30 GPa, an elastic modulus of 374 GPa, and elastic recovery is 62.9%, meaning that the film has the best mechanical properties.