硼-碳和硼-氮量子点器件的输运特性研究

用第一性原理研究了硼-碳和硼-氮量子点器件的输运特性以及电流电压特性.研究结果表明相同数量原子组成的硼-碳和硼-氮器件其输运特性及电流电压特性有很大差别.硼-碳器件在Fermi能附近有较大的态密度,而硼-氮器件的能级在Fermi能附近有很大的间隙,Fermi能位于间隙中.从电流特性中可以看出,硼-碳器件表现出导体的特性,而硼-氮器件表现出半导体的特性.

Transport properties of boron-carbon and boron-nitride quantum dot device

The transport properties and I-V characteristics of boron-carbon and boron-nitride quantum dot devices are investigated by first principles method. The results of the B-C and B-N devices consisting of the same number of atoms have significant differences. There is large density of states near the Fermi energy for B-C device. A wide gap in the density of states of B-N device exists and the Fermi energy lies in the gap. The B-C device reveals metal property and the B-N devices appear as semiconductors.