Dependence of the mechanism of current flow in the in-<Emphasis Type="Italic">n</Emphasis>-GaN alloyed ohmic contact on the majority carrier concentration

Based on the study of the temperature dependence of resistance of the In-n-GaN alloyed ohmic contacts, it is found that the mechanism of current flow in them substantially depends on the concentration N of uncompensated donors in GaN. At N = 5 × 10¹⁶ ? 1 × 10¹⁸ cm^?3, current mainly flows along the metallic shunts, and at N ? 8 × 10¹⁸ cm^?3 it flows by tunneling.