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Problem of fabrication of diamond-based high-power microwave FETs |
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| Authors: | G Z Garber A A Dorofeev A M Zubkov Yu V Kolkovskii Yu A Kontsevoi K N Zyablyuk A Yu Mityagin N Kh Talipov G V Chucheva |
| Affiliation: | 1. Scientific Industrial Enterprise Pulsar, Okruzhnoi proezd, 27, Moscow, 105187, Russia 2. Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences, pl. Vvedenskogo 1, Fryazino, Moscow oblast, 141196, Russia |
| Abstract: | Numerical experiments are used to plan the development of diamond-based microwave FETs with an output power of 2.5 W per 1 mm of the gate width at a frequency of 15 GHz. A family of the I–V characteristics of the Schottky-barrier FET with gate length L G = 50 nm and width W = 1 mm is calculated. Bases on analogy with a TGF2023-20 GaN HEMT, the topology of the high-power diamond transistor (parallel cells with gate widths W = 1.2 mm and 24 elementary gates per cell) is constructed. |
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