Infrared focal plane array incorporating silicon IC processcompatible bolometer |
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| Authors: | Tanaka A Matsumoto S Tsukamoto N Itoh S Chiba K Endoh T Nakazato A Okuyama K Kumazawa Y Hijikawa M Gotoh H Tanaka T Teranishi N |
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| Affiliation: | Microelectron. Res. Labs., NEC Corp., Kanagawa ; |
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| Abstract: | A 128×128 element bolometer infrared image sensor using thin film titanium is proposed. The device is a monolithically integrated structure with a titanium bolometer detector located over a CMOS circuit that reads out the bolometer's signals. By employing a metallic material like titanium and refining the CMOS readout circuit, it is possible to minimize 1/f noise. It is demonstrated that the use of low 1/f noise material will help increase bias current and improve the S/N ratio. Since the fabrication process is silicon-process compatible, costs can be kept low |
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