Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT |
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| Authors: | Yeh C-F Lin S-S Chen C-L Yang Y-C |
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| Affiliation: | Nat. Chiao-Tung Univ., Hsinchu; |
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| Abstract: | A technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO2 film with a lower P-etch rate shows a dense structure. LPD SiO2 also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO 2 as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs) |
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