| ZnO薄膜V族掺杂的研究进展 |
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| 引用本文： | 朱仁江,孔春阳,马勇,王万录,廖克俊.ZnO薄膜V族掺杂的研究进展[J].材料导报,2006,20(1):113-115,125. |
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| 作者姓名： | 朱仁江 孔春阳 马勇 王万录 廖克俊 |
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| 作者单位： | 重庆师范大学光学工程实验室,重庆,400047;重庆大学数理学院,重庆,400044 |
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| 基金项目： | 重庆市科委资助项目，重庆市科委资助项目 |
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| 摘 要： | ZnO薄膜作为第三代半导体功能材料,高质量的p型掺杂是基于光电器件应用的关键.概述了ZnO薄膜V族元素氮、磷、砷(N、P、As)p型掺杂的研究进展,分析对比了3种元素的掺杂和p型转变特性,简单介绍了共掺杂技术,提出了有待进一步研究的问题.
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| 关 键 词： | 氧化锌 p型掺杂 共掺杂 V族元素 |
Development of p-type ZnO Film Prepared by with Group-V Elements Doping |
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| ZHU Renjiang,KONG Chunyang,MA Yong,WANG Wanlu,LIAO Kejun.Development of p-type ZnO Film Prepared by with Group-V Elements Doping[J].Materials Review,2006,20(1):113-115,125. |
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| Authors: | ZHU Renjiang KONG Chunyang MA Yong WANG Wanlu LIAO Kejun |
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| Affiliation: | 1 Optic Engineering Laboratory, Chongqing Normal University,Chongqing 400047; 2 College of Math and Physics, Chongqing University, Chongqing 400044 |
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| Abstract: | ZnO film is the third generation semiconductor functional material) whose high quality p-type doping is the key for developing optoelectronic devices. After summarizing in detail the research on p-type doping with group- V elements including N, P and As, this article describes the technology of codoping and presents some areas where more work is needed. |
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| Keywords: | ZnO p-type doping codoping group- V elements |
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