低温半导体温差发电单元数值模拟与仿真研究

为精确计算分析半导体温差发电单元内部温度场分布及发电特性,构建了常物性和变物性计算模型。在160~280 K温度区间下,分别利用常物性、变物性计算模型对温度场及发电特性进行数值计算,并与ANSYS有限元仿真结果比较。结果表明:在此工作条件下,变物性模型对温度分布的数值计算具有较高的精确性;对发电特性的计算存在一个特定的特征温差能够让变物性模型取代常物性模型,此变物性模型在大于特征温差范围内具有较好的精确度,有效改进了原有的常物性模型。

Numerical simulation and simulation of low temperature semiconductor thermoelectric power generation unit

In order to accurately calculate and analyze the internal temperature field distribution and power generation characteristics of the semiconductor thermoelectric power generation unit,the constant material property and variable material property calculation model were constructed.In the temperature range of 160-280 K,the temperature field and power generation characteristics were numerically calculated by the constant and variable material property calculation models and compared with the ANSYS finite element simulation results.The results show that under this working condition,the variable material property model has higher accuracy for the numerical calculation of temperature distribution.For the calculation of power generation characteristics,there is a specific characteristic temperature difference that can make the variable material property model replace the constant material property model.The variable material property model has better accuracy in the range of higher than the characteristic temperature difference,and effectively improves the original constant material property model.