硅外延中自稀释现象的研究 |
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引用本文: | 王向武,陆春一.硅外延中自稀释现象的研究[J].固体电子学研究与进展,1991,11(1):55-60. |
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作者姓名: | 王向武 陆春一 |
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作者单位: | 南京电子器件研究所 210016
(王向武),南京电子器件研究所 210016(陆春一) |
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摘 要: | 本文采用附面层模型,对硅外延中的自稀释现象作了理论分析,分析了生长速率、气体流速及外延生长温度等因素对自稀释的影响.提出了克服自稀释现象的几种方法.
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关 键 词: | 硅 外延生长 稀释现象 |
A Study on the Auto-diluting Phenomenon in Epitaxial Silicon |
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Abstract: | In this paper, the auto-diluting phenomenon in epitaxial Si has been studied based on the stagnant layer model. The effect of deposition temperature, growth rate and main streen H2 flow on the auto-diluting is analyzed. Several ways to reduce the auto-diluting are given. |
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