Improved performance of CH3NH3PbI3 based photodetector with a MoO3 interface layer |
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| Affiliation: | 1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, PR China;2. University of Chinese Academy of Sciences, Beijing, 100039, PR China;1. Optoelectronics Group, Cavendish Laboratory, J.J. Thomson Avenue, University of Cambridge, Cambridge, CB3 0HE, United Kingdom;2. Makromolekulare Chemie, Universität Freiburg, Stefan-Meier-Straße 31, 79104, Freiburg, Germany;3. Leibniz-Institut für Polymerforschung Dresden e.V., Hohe Straße 6, 01069, Dresden, Germany;4. Department of Materials Science and Engineering, Monash University, Wellington Road, Clayton, Victoria, 3800, Australia;5. Freiburger Materialforschungszentrum, Stefan-Meier-Straße 21, 79104, Freiburg, Germany;1. Department of Electrical and Computer Engineering, Isfahan University of Technology, Isfahan 84156-83111, Iran;2. Physics Department, University of Isfahan, Isfahan, Iran;1. Department of Chemistry, Queens University, Kingston, Ontario, Canada;2. Department of Physics, Engineering Physics and Astronomy, Queens University, Kingston, Ontario, Canada;3. Department of Chemistry and Chemical Engineering, Royal Military College, Kingston, Ontario, Canada;1. Key Laboratory for Organic Electronics & Information Displays (KLOEID), Jiangsu Engineering Centre for Plate Displays & Solid State Lighting, and Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China;2. Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), School of Material Science and Engineering, Nanjing University of Posts & Telecommunications, Nanjing, Jiangsu, 211816, China;3. Department of Mechanical and Aerospace Engineering, University of Central Florida, 4000 Central Florida Blvd, Orlando, FL, 32816, USA;1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, P.za L. da Vinci, 32, 20133, Milano, Italy;2. Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133, Milano, Italy |
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| Abstract: | Planar CH3NH3PbI3 perovskite based photodetectors are fabricated by a facile and low-cost one-step method. The devices show broad spectral photoresponse from the ultraviolet to whole visible region and the performance can be significantly improved by the introduction of a bipolar transporting MoO3 interface layer between CH3NH3PbI3 film and Au electrode. The photocurrent of the device with an optimized MoO3 layer is about twice that of the reference device without MoO3 layer, which results in a high ON/OFF current ratio of 5.9 × 103 at 5 V. Besides, slightly increased photoresponse speed is also found in the optimized device with rise time and decay time of 21.6 and 9.9 ms, respectively. The improvement can be attributed to the improved hole and electron collection efficiency and the quickly filled in or emptied trap states at the CH3NH3PbI3/Au interface due to the introduction of the bipolar transporting MoO3 layer. |
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| Keywords: | Photodetector Perovskite Interface layer Bipolar transporting |
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