Electrical characterization of germanium p-channel MOSFETs |
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| Authors: | Shang H Okorn-Schimdt H Ott J Kozlowski P Steen S Jones EC Wong H-SP Hanesch W |
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| Affiliation: | IBM Res. Div., T. J. Watson Res. Center, Yorktown Heights, NY, USA; |
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| Abstract: | In this letter, we report germanium (Ge) p-channel MOSFETs with a thin gate stack of Ge oxynitride and low-temperature oxide (LTO) on bulk Ge substrate without a silicon (Si) cap layer. The fabricated devices show 2 /spl times/ higher transconductance and /spl sim/ 40% hole mobility enhancement over the Si control with a thermal SiO/sub 2/ gate dielectric, as well as the excellent subthreshold characteristics. For the first time, we demonstrate Ge MOSFETs with less than 100-mV/dec subthreshold slope. |
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