Luminescence from praseodymium doped AlN thin films deposited by RF magnetron sputtering and the effect of material structure and thermal annealing on the luminescence |
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Authors: | Muhammad Maqbool Hugh H Richardson Martin E Kordesch |
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Affiliation: | (1) Department of Science & Mathematics, Mount Olive College, 634 Henderson Street, Mount Olive, NC 28365, USA;(2) Condensed Matter & Surface Sciences Program, Ohio University, Athens, OH 45701, USA |
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Abstract: | Thin films of Praseodymium doped AlN are deposited on silicon (111) substrates at 77 K and 950 K by rf magnetron sputtering
method. About 500–1000 nm thick films are grown at 100–200 watts RF power and 5–8 mTorr nitrogen, using a metal target of
Al with Pr. X-rays diffraction results show that films deposited at 77 K are amorphous and those deposited at 950 K are crystalline.
Cathodoluminescence studies are performed at room temperature and luminescence peaks are observed in a wide range from ultraviolet
to infrared region. The most intense peak is obtained in green at 526 nm from amorphous films as a result from 3P1→3H5 transition. In crystalline films the intense peak was obtain in red at 648 nm as a result from 3P0→3F2 transition. Films are thermally activated at 1300 K for half an hour in a nitrogen atmosphere. Thermal activation enhances
the intensity of luminescence. Two peaks at 488 nm and 505 nm merged after thermal activation, giving rise to a single peak
at 495 nm. |
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