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Si/C/N纳米粉体的吸波特性研究
引用本文:焦桓,罗发,周万城.Si/C/N纳米粉体的吸波特性研究[J].无机材料学报,2002,17(3):595-599.
作者姓名:焦桓  罗发  周万城
作者单位:西北工业大学凝固技术国家重点实验室,西安,710072
基金项目:九五国防预研项目(10.3.2.4)
摘    要:采用XRD研究了氮原子百分含量为11.61%的Si/C/N纳米粉体的相组成,并测定了测粉体介电常数根据介电常数,分别优化调离了单层和双层的吸波涂层,设计的吸波涂层对8-18GHz范围的电磁波有较好的吸收作用,设计厚度为2.7mm的单层吸波涂层,在8-5GHz范围内反射率<-5dB,设计厚度为2.8mm的双层吸波涂层,在8-18GHz频率范围内电磁波的反射率均<-5dB,反射率<-8dB的频带为6GHz,针对纳米粉体的吸波特性,提出了Si/C/N纳米粉体的吸波机理。

关 键 词:Si/C/N纳米粉体  吸波特性  介电性能  吸波结构  优化设计  吸波机理  碳化硅  隐身材料  氮化硅  复合材料
文章编号:1000-324X(2002)03-0595-05
收稿时间:2001-4-9
修稿时间:2001年4月9日

Dielectric Properties of Si/C/N Nano Powders
JIAO Huan,LUO Fa,ZHOU Wan-Cheng.Dielectric Properties of Si/C/N Nano Powders[J].Journal of Inorganic Materials,2002,17(3):595-599.
Authors:JIAO Huan  LUO Fa  ZHOU Wan-Cheng
Affiliation:StateKeyLaboratoryofSolidificationProcessing;NorthwesternPolytechnicalUniversity;Xian710072;China
Abstract:Si/C/N nano powders with 11.61% nitrogen were prepared by CVD. XRD pattern and permittivity of the powders were investigated. On the basis of permittivity of the powders, radar absorber structures of single- and double-layer were designed. A single-layer absorber coating with a reflection coefficient less than -5dB in the frequency range of 8-15GHz was designed with a thickness of 2.7mm. A double-layer radar absorber coating with a reflection coefficient less than -5dB in the frequency range of 8-18GHz was also designed with a thickness of 2.8mm. The range of the reflection coefficient being less than -8dB was 6GHz for the designed double-layer radar absorber. The radar absorbing mechanism of Si/C/N nano powders was also interpreted. The SiC microcrystalline in the nano composite powder dissolves a great deal of nitrogen. The charged defects are caused by N atoms occupying the sites of C in SiC moved in response to the electric field. The dielectric relaxation caused by the charged defects moved in response to the electric field is the main way of the Si/C/N nano powders with absorbing properties.
Keywords:Si/C/N nano powder  permittivity  structure design  absorbing mechanism
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