Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation |
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| Authors: | Chih-Wei Yang Yean-Kuan Fang Shih-Fang Chen Chun-Yu Lin Ming-Fang Wang Yeou-Ming Lin Tuo-Hung Hou Liang-Gi Yao Shih-Chang Chen Mong-Song Liang |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan; |
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| Abstract: | The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH/sub 3/ nitridation, were investigated. The results show that with NH/sub 3/ nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO/sub 2/ (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH/sub 3/ nitridation. |
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