Annealing and irradiation studies of MoC x thin films

On single-phase B1 molybdenum carbide thin films prepared by the rf sputtering technique at substrate temperatures between 40 and 800°C isochronous annealing and He-irradiation investigations were performed. The transition temperature to superconductivityT _c ,the lattice parametera ₀, and the specific resistivity were measured as a function of annealing temperature and fluence, respectively. Both during annealing and irradiation MoC _x behaves quite differently from typical refractory compounds such as NbC and NbN. During annealingT _c drops pronouncedly between 250 and 400°C. The B1 structure transforms to -Mo₂C between 600 and 900°C. During irradiationT _c rises slightly and then drops by only 0.5 K. The lattice parametera ₀ changes only by 0.2%.On leave of absence from the Institute of Physics, Czechoslovak Academy of Sciences, Prague, Czechoslovakia.